Some early reports suggested that Qualcomm, the chipset giant was working on their new high-end processor Snapdragon 845, and was planning to unveil the upcoming processor in Q1 next year, along with Samsung’s Galaxy S9 and Xiaomi’s Mi 7. But the new leak indicated that the company may release the Qualcomm Snapdragon 845 in the month of December.
The leak originated from the Chinese social networking portal, Weibo where an invitation letter from Qualcomm revealed that Qualcomm will be holding its second Snapdragon Technology Summit in Maui Island, Hawaii, from December 4 – 8, 2017. And in that period, the company is expected to unveil Qualcomm’s next-generation flagship processor Snapdragon 845.
As for the technical specs of the Snapdragon 845, several leaked reports suggests the upcoming processor has been upgraded including its Kryo processor architecture, Adreno graphics architecture, LTE baseband, ISP image processing unit (enhanced depth of field sensor) and other aspects. Some reliable sources, even claim that Snapdragon 845 will still use Samsung 10nm LPE, a large nuclear architecture based on Cortex A75 build, Adreno 630 GPU, and an integrated 1.2Gbps X20 baseband.
Few rumors suggests that the Qualcomm Snapdragon 845 SOC’s single threaded score will range between 2600 to 2700 points which when compared to its predecessor will be at-least 25% faster.